6 lake street - lawrence, ma 01841 applications used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. features six sigma quality metallurgically bonded bkc's sigma bond ? plating for problem free solderability ll-34/35 melf smd available full approval to mil-s-19500/337 available up to jantxv-1 levels "s" level screening available to scds silicon switching diode do-35 glass package 1n4150 1n4153, 1n4153-1 maximum ratings symbol value unit peak inverse voltage piv 75 (min.) volts average rectified current i avg 150 mamps continuous forward current i fdc 300 mamps peak surge current (t peak = 1 sec.) i peak 0.25 amp bkc power dissipation t l = 50 o c, l = 3/8" from body p tot 500 mwatts operating and storage temperature range t op & st -65 to +200 o c electrical characteristics @ 25 o c* symbol minimum maximum unit forward voltage @ i f = 100 a v f vf 0.49 0.55 volts forward voltage @ i f = 250 a v f vf 0.53 0.59 volts forward voltage @ i f = 1.0 ma v f vf 0.59 0.67 volts forward voltage @ i f = 2.0 ma v f vf 0.62 0.70 volts forward voltage @ i f = 10 ma v f 0.70 0.81 volts forward voltage @ i f = 20 ma v f 0.74 0.88 volts reverse leakage current @ v r = 50 v i r 0.05(50 @ 150 o c) a breakdown voltage @ i r = 5.0 a piv 75 volts capacitance @ v r = 0 v, f = 1mhz c t 2.0 pf reverse recovery time (note 1) t rr 4.0 nsecs reverse recovery time (note 2) t rr 2.0 nsec note 1: per method 4031-a with i f = i r = 10 ma, r l = 100 ohms, c = 3 pf. *unless otherwise specified note2: per method 4031-a with i f = i r = 10 ma, rr = 6 volts, rl=100 ohms. do-35 glass package dia. 0.06-0.09" 1.0" 25.4 mm (min.) length 0.120-.200" 3.05-5.08- m m 1.53-2.28 m m 0 . 0 18- 0 . 0 22 " 0 .458- 0 .558 m m l e a d d i a .
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